JPH0568799B2 - - Google Patents

Info

Publication number
JPH0568799B2
JPH0568799B2 JP61111315A JP11131586A JPH0568799B2 JP H0568799 B2 JPH0568799 B2 JP H0568799B2 JP 61111315 A JP61111315 A JP 61111315A JP 11131586 A JP11131586 A JP 11131586A JP H0568799 B2 JPH0568799 B2 JP H0568799B2
Authority
JP
Japan
Prior art keywords
transistor
memory
control signal
conductive region
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61111315A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62266793A (ja
Inventor
Yasushi Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61111315A priority Critical patent/JPS62266793A/ja
Priority to US07/046,789 priority patent/US4725983A/en
Publication of JPS62266793A publication Critical patent/JPS62266793A/ja
Publication of JPH0568799B2 publication Critical patent/JPH0568799B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
JP61111315A 1986-05-13 1986-05-13 不揮発性半導体記憶装置 Granted JPS62266793A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61111315A JPS62266793A (ja) 1986-05-13 1986-05-13 不揮発性半導体記憶装置
US07/046,789 US4725983A (en) 1986-05-13 1987-05-07 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61111315A JPS62266793A (ja) 1986-05-13 1986-05-13 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS62266793A JPS62266793A (ja) 1987-11-19
JPH0568799B2 true JPH0568799B2 (en]) 1993-09-29

Family

ID=14558101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61111315A Granted JPS62266793A (ja) 1986-05-13 1986-05-13 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (1) US4725983A (en])
JP (1) JPS62266793A (en])

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63138598A (ja) * 1986-11-28 1988-06-10 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH0777078B2 (ja) * 1987-01-31 1995-08-16 株式会社東芝 不揮発性半導体メモリ
JPH027289A (ja) * 1988-06-24 1990-01-11 Sharp Corp 半導体記憶装置
US5140552A (en) * 1988-02-09 1992-08-18 Sharp Kabushiki Kaisha Semiconductor memory device having a volatile memory device and a non-volatile memory device
US5003507A (en) * 1988-09-06 1991-03-26 Simon Johnson EPROM emulator for selectively simulating a variety of different paging EPROMs in a test circuit
US5262986A (en) * 1989-01-31 1993-11-16 Sharp Kabushiki Kaisha Semiconductor memory device with volatile memory and non-volatile memory in latched arrangement
US5170373A (en) * 1989-10-31 1992-12-08 Sgs-Thomson Microelectronics, Inc. Three transistor eeprom cell
US5070480A (en) * 1990-01-08 1991-12-03 Caywood John M Nonvolatile associative memory system
US5241507A (en) * 1991-05-03 1993-08-31 Hyundai Electronics America One transistor cell flash memory assay with over-erase protection
US5291439A (en) * 1991-09-12 1994-03-01 International Business Machines Corporation Semiconductor memory cell and memory array with inversion layer
DE4493150T1 (de) * 1993-05-11 1995-07-20 Nippon Kokan Kk Nichtflüchtige Speichervorrichtung, nichtflüchtige Speicherzelle und Verfahren zum Einstellen des Schwellenwertes der nichtflüchtigen Speicherzelle und jedes der vielen Transistoren
JPH0778484A (ja) * 1993-07-13 1995-03-20 Nkk Corp 記憶素子、不揮発性メモリ、不揮発性記憶装置及びそれを用いた情報記憶方法
JPH09512658A (ja) * 1994-04-29 1997-12-16 アトメル・コーポレイション 高速で、不揮発性の電気的にプログラム可能で、かつ消去可能なセルおよび方法
US5623444A (en) * 1994-08-25 1997-04-22 Nippon Kokan Kk Electrically-erasable ROM with pulse-driven memory cell transistors
US5615146A (en) * 1994-11-11 1997-03-25 Nkk Corporation Nonvolatile memory with write data latch
US5808338A (en) * 1994-11-11 1998-09-15 Nkk Corporation Nonvolatile semiconductor memory
US5602779A (en) * 1994-11-11 1997-02-11 Nkk Corporation Nonvolatile multivalue memory
US5661686A (en) * 1994-11-11 1997-08-26 Nkk Corporation Nonvolatile semiconductor memory
JPH08329691A (ja) * 1995-05-30 1996-12-13 Nkk Corp 不揮発性半導体記憶装置
JPH0945094A (ja) * 1995-07-31 1997-02-14 Nkk Corp 不揮発性半導体記憶装置
JPH0945090A (ja) * 1995-07-31 1997-02-14 Nkk Corp 不揮発性半導体記憶装置
KR100470988B1 (ko) * 1997-09-03 2005-07-11 삼성전자주식회사 고속재기록용비휘발성메모리장치제조방법
KR100439837B1 (ko) * 1997-09-03 2004-09-18 삼성전자주식회사 고속 재기록용 비휘발성 메모리 장치 및 그 제조 방법
US7158410B2 (en) * 2004-08-27 2007-01-02 Micron Technology, Inc. Integrated DRAM-NVRAM multi-level memory
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US8008702B2 (en) 2008-02-20 2011-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-transistor non-volatile memory element
CN110164761A (zh) * 2019-05-28 2019-08-23 上海华力微电子有限公司 隧穿氧化层的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450116C2 (de) * 1974-10-22 1976-09-16 Siemens AG, 1000 Berlin und 8000 München Dynamisches Ein-Transistor-Speicherelement für nichtflüchtige Speicher und Verfahren zu seinem Betrieb
JPS5538664A (en) * 1978-09-08 1980-03-18 Sanyo Electric Co Ltd Nonvolatile memory circuit
JPS61105862A (ja) * 1984-10-30 1986-05-23 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS62266793A (ja) 1987-11-19
US4725983A (en) 1988-02-16

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